HL · FETs & Power MOSFETs · MPN S80P10T
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| Output Capacitance(Coss) | 536pF |
|---|---|
| Pd - Power Dissipation | 250W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 76nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 22mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.2nF |
250W 100V 3V 22mΩ@10V 1 P-Channel P-Channel TO-220 Single FETs, MOSFETs RoHS