HL S80P10T

HL · FETs & Power MOSFETs · MPN S80P10T

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Specifications

Output Capacitance(Coss)536pF
Pd - Power Dissipation250W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)76nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 P-Channel
Input Capacitance(Ciss)4.2nF

Technical details

250W 100V 3V 22mΩ@10V 1 P-Channel P-Channel TO-220 Single FETs, MOSFETs RoHS

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