HL S80P06G

HL · FETs & Power MOSFETs · MPN S80P06G

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)56nC@10V
Output Capacitance(Coss)620pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.06nF
TypeP-Channel

Technical details

P-Channel 60V 80A 110W Surface Mount TO-263

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