HL S65N06F

HL · FETs & Power MOSFETs · MPN S65N06F

No reviews yet — be the first to review HL S65N06F.

Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)930pF
TypeN-Channel

Technical details

N-Channel 60V 65A 89W Surface Mount PDFN(5x6)

Related FETs & Power MOSFETs