HL · FETs & Power MOSFETs · MPN S60N10
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| Gate Charge(Qg) | 22.7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 67.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 11.3pF |
| RDS(on) | 13.5mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.208nF |
N-Channel 100V 60A 67.5W Surface Mount TO-252