HL · FETs & Power MOSFETs · MPN S160N06T
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| Gate Charge(Qg) | 111.56nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 3.282nF |
| Current - Continuous Drain(Id) | 160A |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 189W |
| Reverse Transfer Capacitance (Crss@Vds) | 132pF |
| RDS(on) | 2.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.915nF |
N-Channel 60V 160A 189W Through Hole TO-220