HL · FETs & Power MOSFETs · MPN S150N10T
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 84nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 900pF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 312W |
| Reverse Transfer Capacitance (Crss@Vds) | 19.1pF |
| RDS(on) | 3.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.797nF |
100V 150A 4V 312W 3.8mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS