HL S120P10T

HL · FETs & Power MOSFETs · MPN S120P10T

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Specifications

Output Capacitance(Coss)798pF
Pd - Power Dissipation300W
Gate Charge(Qg)136nC
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)111.2pF
RDS(on)12.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)9.349nF

Technical details

300W 100V 3V 12.5mΩ@10V 1 P-Channel P-Channel TO-220 Single FETs, MOSFETs RoHS

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