HL S120N10T

HL · FETs & Power MOSFETs · MPN S120N10T

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Specifications

Gate Charge(Qg)69nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)592pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)19.8pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.102nF

Technical details

100V 120A 178W Through Hole TO-220

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