HL S110P06G

HL · FETs & Power MOSFETs · MPN S110P06G

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)80.2nC@10V
Output Capacitance(Coss)941pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)7mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.403nF
TypeP-Channel

Technical details

P-Channel 60V 110A 180W Surface Mount TO-263

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