HL S100P06F

HL · FETs & Power MOSFETs · MPN S100P06F

No reviews yet — be the first to review HL S100P06F.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)80.2nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)7.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.403nF

Technical details

60V 100A 180W Surface Mount PDFN5x6-8L

Related FETs & Power MOSFETs