HL S100N85F

HL · FETs & Power MOSFETs · MPN S100N85F

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Specifications

Gate Charge(Qg)61.3nC@10V
Drain to Source Voltage85V
Output Capacitance(Coss)673pF
Current - Continuous Drain(Id)100A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation107.8W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)5.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.645nF
TypeN-Channel

Technical details

N-Channel 85V 100A 107.8W Surface Mount PDFN5x6-8L

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