HL HL7N65RF

HL · FETs & Power MOSFETs · MPN HL7N65RF

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)91pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation189W
RDS(on)1.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)2.9pF
Number1 N-channel
Input Capacitance(Ciss)1.185nF

Technical details

650V 7A 2.8V 189W 1.2Ω@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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