HL · FETs & Power MOSFETs · MPN HL4N65RF
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| Gate Charge(Qg) | 17.9nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 53pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 114W |
| RDS(on) | 2.3Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 525pF |
650V 4A 3.4V 114W 2.3Ω@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS