HL · FETs & Power MOSFETs · MPN HL4N65R
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 52pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 69W |
| RDS(on) | 2.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 518pF |
650V 4A 3.5V 69W 2.2Ω@10V 1 N-channel TO-252-3L Single FETs, MOSFETs RoHS