HL · FETs & Power MOSFETs · MPN HL12N65RF
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 149pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 313W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 650mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.124nF |
| Type | N-Channel |
650V 12A 2.9V 313W 650mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS