HL · FETs & Power MOSFETs · MPN HL10N65RF
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| Gate Charge(Qg) | 33.1nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 129pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 278W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.4pF |
| RDS(on) | 800mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.94nF |
650V 10A 3.7V 278W 800mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS