HL 9N20

HL · FETs & Power MOSFETs · MPN 9N20

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)22.8nC@10V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)922pF

Technical details

200V 9A 30W Surface Mount TO-252

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