HL 8N65R

HL · FETs & Power MOSFETs · MPN 8N65R

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Specifications

Gate Charge(Qg)15.6nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation73W
RDS(on)550mΩ@10V
Number1 N-channel

Technical details

N-Channel 650V 8A 73W Surface Mount TO-252-3L

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