HL 80P02

HL · FETs & Power MOSFETs · MPN 80P02

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Specifications

Gate Charge(Qg)55nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)665pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation43.1W
Reverse Transfer Capacitance (Crss@Vds)570pF
RDS(on)6.8mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)4.77nF
TypeP-Channel

Technical details

P-Channel 20V 80A 43.1W Surface Mount TO-252

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