HL 80N06

HL · FETs & Power MOSFETs · MPN 80N06

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Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)286pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation108W
Reverse Transfer Capacitance (Crss@Vds)257pF
RDS(on)5.3mΩ
Number1 N-channel
Input Capacitance(Ciss)4.136nF
TypeN-Channel

Technical details

N-Channel 60V 80A Surface Mount TO-252-4R

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