HL 80N03D

HL · FETs & Power MOSFETs · MPN 80N03D

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Specifications

Gate Charge(Qg)60.5nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation82.5W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)5.2mΩ
Number1 N-channel
Input Capacitance(Ciss)2.016nF

Technical details

N-Channel 30V 80A 82.5W Surface Mount DFN3x3

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