HL 650SJ320

HL · FETs & Power MOSFETs · MPN 650SJ320

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Specifications

Gate Charge(Qg)20.3nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)390mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)710pF

Technical details

650V 11A 85W Surface Mount TO-252

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