HL 50N10

HL · FETs & Power MOSFETs · MPN 50N10

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Specifications

Gate Charge(Qg)119nC
Drain to Source Voltage100V
Output Capacitance(Coss)176pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)148pF
RDS(on)18mΩ
Number1 N-channel
Input Capacitance(Ciss)4.7nF

Technical details

N-Channel 100V 50A Surface Mount TO-252

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