HL 4N50

HL · FETs & Power MOSFETs · MPN 4N50

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation32.9W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)2.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)310pF

Technical details

N-Channel 500V 4A 32.9W Surface Mount TO-252

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