HL · FETs & Power MOSFETs · MPN 4N50
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| Gate Charge(Qg) | 8nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 32.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 310pF |
N-Channel 500V 4A 32.9W Surface Mount TO-252