HL 4N10L

HL · FETs & Power MOSFETs · MPN 4N10L

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Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)14.8nC@10V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation26.6W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)156mΩ@10V
Number-
Input Capacitance(Ciss)655pF

Technical details

100V 4A 26.6W Surface Mount SOT-23-3L

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