HL 35N10

HL · FETs & Power MOSFETs · MPN 35N10

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Specifications

Gate Charge(Qg)60nC@4.5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)74pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)32.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)90pF

Technical details

100V 35A 42W Surface Mount TO-252

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