HL 2319

HL · FETs & Power MOSFETs · MPN 2319

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Specifications

Gate Charge(Qg)11.8nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)85mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)553pF
TypeP-Channel

Technical details

P-Channel 40V 4A 1.2W Surface Mount SOT-23

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