HL 20N10

HL · FETs & Power MOSFETs · MPN 20N10

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Specifications

Gate Charge(Qg)20.6nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation41.7W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)105mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 100V 20A 41.7W Surface Mount TO-252

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