HL 20N06D

HL · FETs & Power MOSFETs · MPN 20N06D

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Specifications

Gate Charge(Qg)20.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)58.5pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)49.4pF
RDS(on)28mΩ
Number1 N-channel
Input Capacitance(Ciss)1.148nF
TypeN-Channel

Technical details

N-Channel 60V 20A Surface Mount PDFN-8(3x3)

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