HL 20G10F

HL · FETs & Power MOSFETs · MPN 20G10F

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Specifications

Gate Charge(Qg)20.6nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)15A
Output Capacitance(Coss)53pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.5W
RDS(on)220mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.228nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 100V 15A 3.5W Surface Mount PDFN5x6-8L

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