HL 2010S

HL · FETs & Power MOSFETs · MPN 2010S

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Specifications

Gate Charge(Qg)10.5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2.25W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)13mΩ
Number1 N-channel
Input Capacitance(Ciss)700pF

Technical details

N-Channel 20V 8A 2.25W Surface Mount SOP-8

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