HL 200N04T

HL · FETs & Power MOSFETs · MPN 200N04T

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Specifications

Output Capacitance(Coss)528pF
Pd - Power Dissipation62W
Configuration-
Gate Charge(Qg)80nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
RDS(on)2.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)317pF
Number1 N-channel
Input Capacitance(Ciss)4.9nF

Technical details

62W 40V 2.8V 2.6mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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