HL 11N65RT

HL · FETs & Power MOSFETs · MPN 11N65RT

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation29W
RDS(on)450mΩ@10V
Number1 N-channel

Technical details

N-Channel 650V 11A 29W Through Hole TO-220

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