HL 11N65R

HL · FETs & Power MOSFETs · MPN 11N65R

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)790pF
Vgs±30V

Technical details

N-Channel 650V 11A 29W Surface Mount TO-252-3L

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