HL 10N10Q

HL · FETs & Power MOSFETs · MPN 10N10Q

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Specifications

Gate Charge(Qg)26.2nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)85mΩ
Number1 N-channel
Input Capacitance(Ciss)1.535nF

Technical details

N-Channel 100V 10A Surface Mount SOT-89-3L

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