HL 100N02

HL · FETs & Power MOSFETs · MPN 100N02

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Specifications

Gate Charge(Qg)48nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)445pF
RDS(on)2.7mΩ
Number1 N-channel
Input Capacitance(Ciss)3.2nF

Technical details

N-Channel 20V 100A 88W Surface Mount TO-252-4R

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