High Diode PXT8050

High Diode · Transistors (BJTs) · MPN PXT8050

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain350
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation500mW
typeNPN
Number1 NPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 0.5W Surface Mount SOT-89-3L

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