High Diode MMBTA44

High Diode · Transistors (BJTs) · MPN MMBTA44

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO6V
DC Current Gain50
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-
Vce Saturation(VCE(sat))750mV

Technical details

Bipolar (BJT) Transistor NPN 400V 200mA 350mW Surface Mount SOT-23

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