Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVT13N06SA
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| Gate Charge(Qg) | 60.9nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 4.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.547nF |
| Type | N-Channel |
60V 13A 2.5V 4.6W 11mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS