Hangzhou Silan Microelectronics SVT044R5NT

Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVT044R5NT

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Specifications

Gate Charge(Qg)111nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)542pF
Current - Continuous Drain(Id)178A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)401pF
RDS(on)3.5mΩ@10V;4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.603nF
TypeN-Channel

Technical details

N-Channel 40V 178A 178W Through Hole TO-220

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