Hangzhou Silan Microelectronics SVT042R5NT

Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVT042R5NT

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)108nC@10V
Output Capacitance(Coss)770pF
Current - Continuous Drain(Id)174A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation250W
RDS(on)2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)520pF
Number1 N-channel
Input Capacitance(Ciss)5.7nF
TypeN-Channel

Technical details

N-Channel 40V 174A 250W Through Hole TO-220

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