Hangzhou Silan Microelectronics SVT036R0NL3TR

Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVT036R0NL3TR

No reviews yet — be the first to review Hangzhou Silan Microelectronics SVT036R0NL3TR.

Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)58A
Output Capacitance(Coss)171pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation32W
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)128pF
Input Capacitance(Ciss)1.192nF
TypeN-Channel

Technical details

N-Channel 30V 58A 32W Surface Mount PDFN-8(3x3)

Related FETs & Power MOSFETs