Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVSP65R110P7HD4
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 35A |
| Output Capacitance(Coss) | 83pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 278W |
| RDS(on) | 110mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.4pF |
| Input Capacitance(Ciss) | 3.01nF |
| Type | N-Channel |
N-Channel 650V 35A 278W Through Hole TO-247-3L