Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVSP24N60FJDD2
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 49nC@10V |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 47W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.8pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.48nF |
N-Channel 600V 24A 47W Through Hole TO-220FJD-3L