Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVS80R280FJDE3
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 43nC@10V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 38W |
| RDS(on) | 280mΩ@10V |
| Type | N-Channel |
N-Channel 800V 17A 38W Through Hole TO-220FJD-3L