Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVS65R240FJDD4
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 20A |
| Output Capacitance(Coss) | 51pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF |
| RDS(on) | 240mΩ@10V |
| Input Capacitance(Ciss) | 1.153nF |
| Type | N-Channel |
N-Channel 650V 20A 25W Through Hole TO-220FJD-3L