Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVS60R190FJDD4
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 31nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Output Capacitance(Coss) | 53pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF |
| RDS(on) | 190mΩ@10V |
| Input Capacitance(Ciss) | 1.177nF |
| Type | N-Channel |
N-Channel 600V 20A 25W Through Hole TO-220FJD-3L