Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVS20N60FJD2
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| Gate Charge(Qg) | 39nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.174nF |
| Type | N-Channel |
N-Channel 600V 20A 45W Through Hole TO-220F-3