Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVS14N60FJD2
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 48pF |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.9pF |
| RDS(on) | 280mΩ@10V |
| Input Capacitance(Ciss) | 838pF |
| Type | N-Channel |
N-Channel 600V 14A 120W Through Hole TO-220F-3