Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVS11N65FJD2
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 37pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| RDS(on) | 330mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 632pF |
| Type | N-Channel |
N-Channel 650V 11A 35W Through Hole TO-220F-3